2SB562 transistor (pnp) features power dissipation p cm : 900 mw (tamb=25 ) collector current i cm : -1 a collector-base voltage v (br)cbo : -25 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -10 a, i e =0 -25 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -20 v, i e =0 -1 a emitter cut-off current i ebo v eb = -4 v, i c =0 -1 a dc current gain h fe(1) v ce = -2 v, i c = -0.5 a 85 240 collector-emitter saturation voltage v ce(sat) i c = -0.8 a, i b = -0.08 a -0.5 v base-emitter voltage v be v ce = -2 v, i c = -0.5 a -1 v transition frequency f t v ce = -2 v, i c = -0.5 a 350 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 38 pf classification of h fe(1) rank b c range 85-170 120-240 1 2 3 to-92l 1. emitter 2. collector 3. base 2SB562 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
